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PRELIMINARY TECHNICAL DATA
a
FEATURES Low On Resistance < 0.5 max at 5 V supply 0.1 On Resistance Flatness +1.8 V to +5.5 V Single Supply 100pA Leakage Currents 14ns Switching Times Extended Temperature Range -40oC to +125oC High Current Carrying Capability Tiny 6 lead SOT23 and 8 Lead SOIC Packages Low Power Consumption TTL/CMOS Compatible Inputs Pin Compatible with ADG701/ADG702 APPLICATIONS Power Routing Audio and Video Signal Routing Cellular Phones Modems PCMCIA Cards Hard Drives Data Acquisition Systems Communication Systems Relay replacement Audio and Video Switching Battery Powered Systems
<0.5 CMOS, Low Voltage, SPST Switches ADG801/ADG802
FUNCTIONAL BLOCK DIAGRAMS
ADG801
S
D
ADG802
S
D
IN
IN
SWITCHES SHOWN FOR A LOGIC "1" INPUT
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG801/ADG802 are monolithic CMOS SPST (Single Pole, Single Throw) switches with On Resistance of less than 0.5. These switches are designed on an advanced submicron process that provides extremely low on resistance, high switching speed and low leakage currents. The low On Resistance of <0.5 means these parts are ideal for applications where low on resistance switching is critical. The ADG801 is a normally open (NO) switch, while the ADG802 is normally closed (NC). Each switch conducts equally well in both directions when ON. The ADG801 and ADG802 are available in 6-lead SOT-23 and 8 Lead SOIC packages.
1. Low On Resistance (0.25 typical). 2. +1.8V to +5.5V Single Supply Operation. 3. Tiny 6 Lead SOT23 and 8 Lead SOIC Packages. 4. Pin Compatible with ADG701 (ADG801) Pin Compatible with ADG702 (ADG802).
REV. PrE Jan `02
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O.Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2002
PRELIMINARY TECHNICAL DATA
ADG801/ADG802-SPECIFICATIONS1
(VDD = 5 V 10%, VSS = GND = 0 V. All specifications -40C to +125C unless otherwise noted.)
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) +25 C
o
-40oC to +85oC
-40oC to +125oC
Units
Test Conditions/Comments
0.25 0.4 On-Resistance Flatness (RFLAT(ON)) 0.05
0.5 0.1
0 V to VDD V 0.75 0.2
typ max typ max typ max typ max typ max
VS = 0 V to VDD, IS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VDD = +5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V, or 4.5 V; Test Circuit 3
LEAKAGE CURRENTS Source OFF Leakage IS (OFF)
0.01 0.5 Drain OFF Leakage ID (OFF) 0.01 0.5 Channel ON Leakage ID, IS (ON) 0.01 0.5
1 1 1
tbd tbd tbd 2.4 0.8
nA nA nA nA nA nA
DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or I INH C IN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON t OFF Charge Injection Off Isolation Bandwidth -3 dB C S (OFF) C D (OFF) C D, CS (ON) POWER REQUIREMENTS I DD
2
V min V max A typ VIN = VINL or VINH A max pF typ ns typ ns max ns typ ns max pC typ RL = 50 , CL = 35 pF VS = 3 V; Test Circuit 4
0.005 0.1 5 30 TBD 20 TBD 20 -65 30 55 55 110 0.001 1.0
TBD
TBD
RL = 50 , CL = 35 pF VS = 3 V; Test Circuit 4 VS = 0 V, RS = 0 , CL = 1 nF, Test Circuit 5 dB typ RL = 50 , CL = 5 pF, f = 1 MHz, Test Circuit 6 MHz typ RL = 50 , CL = 5 pF, Test Circuit 7 pF typ f = 1 MHz pF typ f = 1 MHz pF typ f = 1 MHz VDD = +5.5 V A typ Digital Inputs = 0 V or 5.5 V A max
NOTES 1 Temperature ranges are as follows: Extended Temperature Range: - 40C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
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REV. PrE
PRELIMINARY TECHNICAL DATA ADG801/ADG802
SPECIFICATIONS1(V
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON)
DD
= 2.7 V to 3.6 V, VSS = GND = 0 V. All specifications -40C to +125C unless otherwise noted.)
+25 C
o
-40oC to -40oC to +85oC +125oC
Units
Test Conditions/Comments
0.3 0.7 On-Resistance Flatness(RFLAT(ON)) 0.1 0.01 0.5 Drain OFF Leakage ID (OFF) 0.01 0.5 Channel ON Leakage ID, IS (ON) 0.01 0.5
0.8
0 V to VDD V 1 typ max 0.3 typ nA nA nA nA nA nA typ max typ max typ max
VS = 0 V to VDD, IS = -10 mA; Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VDD = +3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V, or 3 V; Test Circuit 3
LEAKAGE CURRENTS Source OFF Leakage IS (OFF)
0.1 0.1 0.1
tbd tbd tbd 2.0 0.4
DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance
2
V min V max A typ A max pF typ ns typ ns max ns typ VIN = VINL or VINH
0.005 0.1 5
DYNAMIC CHARACTERISTICS tON 50 TBD t OFF 40 TBD Charge Injection 20 Off Isolation Bandwidth -3 dB C S (OFF) C D (OFF) CD, CS (ON) POWER REQUIREMENTS IDD -65 30 55 55 110 0.001
TBD TBD
RL = 50 , CL = 35 pF VS = 1.5 V, Test Circuit 4 RL = 50 , CL = 35 pF ns max VS = 1.5 V, Test Circuit 4 pC typ VS = 0 V, RS = 0 , CL = 1 nF, Test Circuit 5 dB typ RL = 50 , CL = 5 pF, f = 1 MHz, Test Circuit 6 MHz typ RL = 50 , CL = 5 pF, Test Circuit 7 pF typ f = 1 MHz pF typ f = 1 MHz pF typ f = 1 MHz A typ A max VDD = +3.3 V Digital Inputs = 0 V or 3.3 V
1.0
NOTES 1 Temperature ranges are as follows: Extended Temperature Range: -40C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
REV. PrE
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PRELIMINARY TECHNICAL DATA ADG801/ADG802
ABSOLUTE MAXIMUM RATINGS1
(TA = +25C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +7 V Analog Inputs2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to VDD +0.3 V . . . . . . . . . . . . . . . . . . . . or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 400 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Extended . . . . . . . . . . . . . . . . . . . . . . . -40C to +125C Storage Temperature Range . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150C SOIC Package, Power Dissipation . . . . . . . . . . . 315 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . 206C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . 44C/W SOT-23 Package, Power Dissipation . . . . . . . . . . 282 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . 229.6C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . 91.99C/W Lead Temperature, Soldering (10seconds) . . . . . . . 300C IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . +220C ESD.....................................................................2kV
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
Table I. Truth Table
ADG801 In 0 1
ADG802 In 1 0
Switch Condition OFF ON
PIN CONFIGURATIONS
6-Lead Plastic Surface Mount (SOT-23) (RT-6)
D1 S2 GND 3
6
8-Lead Small Outline SOIC (RM-8)
D NC
1 2 8
ADG801/ ADG802
V DD NC IN
S GND
5
TOP VIEW 4 (Not to Scale)
ADG801/ ADG802
7
NC = NO CONNECT
TOP VIEW 6 IN V DD 4 (Not to Scale) 5 NC NC = NO CONNECT
NC 3
ORDERING GUIDE
Model ADG801BRT ADG801BRM ADG802BRT ADG802BRM
1
Temperature Range -40C -40C -40C -40C to to to to +125C +125C +125C +125C
Supply Option1 Brand1 3 3 3 3 V, V, V, V, 5 5 5 5 V V V V SLB SLB SMB SMB
Package Descriptions
Package Options
SOT-23 (Plastic Surface Mount) RT-6 SOIC (Small Outline) RM-8 SOT-23 (Plastic Surface Mount) RT-6 SOIC (Small Outline) RM-8
Branding on SOT-23 and SOIC packages is limited to 3 characters due to space constraints.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG801/ADG802 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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REV. PrE
PRELIMINARY TECHNICAL DATA ADG801/ADG802
TERMINOLOGY
VDD IDD GND S D IN VD (VS) RON RFLAT(ON) IS (OFF) ID (OFF) ID, IS (ON) VINL VINH IINL(IINH) CS (OFF) CD (OFF) CD,CS(ON) CIN tON tOFF Charge Injection Off Isolation Crosstalk Bandwidth Insertion Loss
Most positive power supply potential. Positive supply current. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Analog voltage on terminals D, S Ohmic resistance between D and S. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal range. Source leakage current with the switch "OFF." Drain leakage current with the switch "OFF." Channel leakage current with the switch "ON." Maximum input voltage for logic "0". Minimum input voltage for logic "1". Input current of the digital input. "OFF" switch source capacitance. Measured with reference to ground. "OFF" switch drain capacitance. Measured with reference to ground. "ON" switch capacitance. Measured with reference to ground. Digital input capacitance. Delay between applying the digital control input and the output switching on. See Test Circuit 4. Delay between applying the digital control input and the output switching off. A measure of the glitch impulse transferred from the digital input to the analog output during switching. A measure of unwanted signal coupling through an "OFF" switch. A measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance. The frequency at which the output is attenuated by 3dBs. The loss due to the ON resistance of the switch.
On Response The Frequency response of the "ON" switch.
REV. PrE
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PRELIMINARY TECHNICAL DATA ADG801/ADG802 TYPICAL PERFORMANCE CHARACTERISTICS
TBD
TBD
TBD
Figure 1. On Resistance as a Function of VD(VS)
Figure 4. Leakage Currents as a function of VD(VS)
Figure 7. Leakage Currents as a Function of Temperature
TBD
TBD
TBD
Figure 2. On Resistance as a Function of VD(VS) for Different Temperatures
Figure 5. Leakage Currents as a function of VD(VS)
Figure 8. Supply Currents vs. Input Switching Frequency
TBD
TBD
TBD
Figure 3. On Resistance as a Function of VD(VS) for Different Temperatures
Figure 6. Leakage Currents as a function of Temperature
Figure 9. Charge Injection vs. Source Voltage
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REV. PrE
PRELIMINARY TECHNICAL DATA ADG801/ADG802
TBD
TBD
Figure 10. TON/TOFF Times vs. Temperature
Figure 13. On Response vs. Frequency
TBD
Figure 11. Off Isolation vs. Frequency
TBD
Figure 12. Crosstalk vs. Frequency
REV. PrE
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PRELIMINARY TECHNICAL DATA ADG801/ADG802 Test Circuits
IDS
V1
IS (OFF) ID (OFF) S D A VD NC S D
S
D
ID (ON) A VD
A VS
VS
RON = V1/IDS
NC=No Connect
Test Circuit 1. On Resistance
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
VDD 0.1 F VIN ADG801 VDD S VS D RL 300 GND VOUT VIN IN CL 35pF VOUT 50% 50%
ADG802
50% 90%
50% 90%
tON
tOFF
Test Circuit 4. Switching Times
VDD
VDD RS VS IN GND S D VOUT CL 1nF
VIN
ADG801
ON OFF
VIN VOUT
ADG802
VOUT
QINJ = CL
VOUT
Test Circuit 5. Charge Injection
VDD 0.1 F NETWORK ANALYZER 50 VS VOUT VIN GND VOUT VS INSERTION LOSS = 20 LOG IN D RL 50 VOUT 0.1 F VDD S IN D VIN GND RL 50 50 NETWORK ANALYZER 50 VS
VDD
VDD S
OFF ISOLATION = 20 LOG
VOUT WITH SWITCH VOUT WITHOUT SWITCH
Test Circuit 6. Off Isolation
Test Circuit 7. Bandwidth
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REV. PrE
PRELIMINARY TECHNICAL DATA ADG801/ADG802
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead SOIC (RM-8)
0.122 (3.10) 0.114 (2.90)
6-Lead SOT-23 (RT-6)
0.122 (3.10) 0.106 (2.70)
8
5
0.122 (3.10) 0.114 (2.90)
0.199 (5.05) 0.187 (4.75)
1 4
0.071 (1.80) 0.059 (1.50) PIN 1
6 1
5 2
4 3
0.118 (3.00) 0.098 (2.50)
PIN 1 0.0256 (0.65) BSC 0.120 (3.05) 0.112 (2.84) 0.006 (0.15) 0.002 (0.05) 0.018 (0.46) SEATING 0.008 (0.20) PLANE 0.043 (1.09) 0.037 (0.94) 0.011 (0.28) 0.003 (0.08) 0.120 (3.05) 0.112 (2.84) 33 27
0.075 (1.90) BSC 0.051 (1.30) 0.035 (0.90) 0.006 (0.15) 0.000 (0.00)
0.037 (0.95) BSC
0.057 (1.45) 0.035 (0.90) 0.020 (0.50) SEATING 0.010 (0.25) PLANE 10 0.009 (0.23) 0 0.003 (0.08) 0.022 (0.55) 0.014 (0.35)
0.028 (0.71) 0.016 (0.41)
REV. PrE
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